Mobility of the {0110} inversion domain boundary in ZnO nanopillars

The apparent activation energy of a nanostructure is difficult to directly measure experimentally. In this letter, we present computational method for estimating the range semiconductor nanostructures. This allows be obtained from experimentally measured average time or propagation speed at various temperatures phase boundary associated with transformation. approach entails analyzing mobility transformation in question using model based on Arrhenius relation. specific analysis carried out uses {0110} inversion domain wurtzite ZnO nanopillars as example. Molecular dynamics simulations are conducted over temperature 300–900 K corresponding available experimental data. and offer means establishing variety wurtzite-structured II-VI, III-V IV-IV binary compounds.